inchange semiconductor isc product specification isc silicon npn power transistors 2SD103 description collector-emitter breakdown voltage- : v (br)ceo = 50v(min) high power dissipation- : p c = 25w(max)@t c =25 complement to type 2sb503 applications designed for audio power amplifier, power switching, dc-dc converter and regulator applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 10 v i c collector current-continuous 3 a i e emitter current-continuous -3 a i b b base current-continuous 1 a p c collector power dissipation @t c =25 25 w t j junction temperature 150 t stg storage temperature -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors 2SD103 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 100ma; i b = 0 50 v v (br)cbo collector-base breakdown voltage i c = 10ma; i e = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.0 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.3a b 1.5 v v be (on) base-emitter on voltage i c = 0.5a; v ce = 5v 1.0 v i cbo collector cutoff current v cb = 50v; i e = 0 20 a i ebo emitter cutoff current v eb = 10v; i c = 0 200 a h fe-1 dc current gain i c = 0.5a; v ce = 5v 30 300 h fe-2 dc current gain i c = 2.5a; v ce = 5v 15 f t current-gain?bandwidth product i e = -0.5a; v ce = 10v 1 mhz c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 200 pf isc website www.iscsemi.cn
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